Title :
New method for the extraction of MOSFET parameters
Author :
Ghibaudo, Gerard
Author_Institution :
Sachs & Freeman Associates Inc., Landover, MD
fDate :
4/28/1988 12:00:00 AM
Abstract :
A new method for the extraction of the MOSFET parameters is presented. The method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage Vt, the low field mobility μ0 and the mobility attenuation coefficient θ to be obtained
Keywords :
carrier mobility; insulated gate field effect transistors; MOSFET parameters; drain current; extraction; low field mobility; mobility attenuation coefficient; threshold voltage; transconductance transfer characteristics;
Journal_Title :
Electronics Letters
