Title :
Pulsed 0.75kW output single-ended GaN-FET amplifier for L/S band applications
Author :
Wakejima, A. ; Nakayama, T. ; Ota, K. ; Okamoto, Y. ; Ando, Y. ; Kuroda, N. ; Tanomura, M. ; Matsunaga, K. ; Miyamoto, H.
Author_Institution :
R&D Assoc. for Future Electron Devices, NEC Corp., Otsu
Abstract :
A pulsed 0.75 kW output GaN-FET amplifier for L/S band high power applications has been successfully developed. A single-ended configuration is adopted to make the amplifier compact and simple. The amplifier delivers a saturated output power of 0.75 kW under pulsed RF operation at 2.14 GHz, which is believed to be the highest output power reported in an L/S band single-packaged device
Keywords :
III-V semiconductors; UHF amplifiers; field effect transistor circuits; gallium compounds; wide band gap semiconductors; 0.75 kW; 2.14 GHz; GaN; L/S band high power applications; pulsed output single-ended FET amplifier; pulsed radiofrequency operation; single-ended configuration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062950
