Title :
Low-threshold GaInNAs single-quantum-well lasers with emission wavelength over 1.3 μm
Author :
Adachi, K. ; Nakahara, K. ; Kasai, J. ; Kitatani, T. ; Tsuchiya, T. ; Aoki, M. ; Kondow, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji
Abstract :
Low-threshold GaInNAs single-quantum-well (SQW) lasers with emission wavelength over 1.3 mum are demonstrated. Epitaxial layers of the lasers are grown using an aluminium-free gas-source molecular-beam epitaxy (GS-MBE) to prevent any impurity or contamination related to aluminium that might be incorporated into the GaInNAs active layer. The fabricated laser is believed it exhibit the lowest threshold-current density (200 A/cm2) among GaInNAs-SQW lasers grown by MBE. Moreover, record low threshold current (5.2 mA) and long-wavelength (1.31 mum) emission were achieved in a ridge-waveguide laser at 25degC under continuous-wave operation
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor thin films; 1.31 micron; 25 C; 5.2 mA; GaInNAs; aluminium free gas source molecular beam epitaxy; contamination; continuous-wave operation; emission wavelength; epitaxial layers; impurity; single quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062982
