• DocumentCode
    855523
  • Title

    High-speed thin-film transistor on flexible substrate fabricated at room temperature

  • Author

    Vaillancourt, J. ; Lu, X. ; Han, X. ; Janzen, D.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Lowell, MA
  • Volume
    42
  • Issue
    23
  • fYear
    2006
  • Firstpage
    1365
  • Lastpage
    1366
  • Abstract
    A high-speed thin-film transistor (TFT) on a regular transparency film is reported. The TFT was fabricated at room temperature using an electronic-grade carbon nanotube solution. The TFT shows a high field-effect mobility of ~47 662 cm2/Vs and a large current carrying capacity of ~30 mA. A high operation frequency exceeding 150 MHz has been demonstrated at a low gate voltage of a few volts. Such a TFT would be a critical building block for low-cost, large-area, and high-speed flexible printed electronics
  • Keywords
    carbon nanotubes; flexible electronics; high-speed integrated circuits; printed circuits; thin film transistors; 30 mA; carbon nanotube solution; field effect mobility; flexible substrate; high-speed flexible printed electronics; thin film transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20062295
  • Filename
    4027832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=855523