DocumentCode :
855580
Title :
Linearity of breakdown voltage vs temperature in silicon avalanche diode
Author :
Wang, W.C.
Volume :
51
Issue :
7
fYear :
1963
fDate :
7/1/1963 12:00:00 AM
Firstpage :
1045
Lastpage :
1045
Keywords :
Diodes; Electromagnetic transients; Glass; Linearity; Plasma diagnostics; Pulse measurements; Silicon alloys; Space vector pulse width modulation; Temperature distribution; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2408
Filename :
1444338
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=855580
