DocumentCode :
855598
Title :
Highly-accurate low-voltage sourcedegenerated-based V-I converter using positive feedback
Author :
Calvo, B. ; Ramírez-Angulo, J. ; Garimella, S.R.S.
Author_Institution :
Group of Electron. Design GDE-CDAM, Univ. of Zaragoza
Volume :
43
Issue :
10
fYear :
2007
Firstpage :
569
Lastpage :
570
Abstract :
A new low-voltage CMOS V-I converter is presented, based on source degeneration. To achieve a highly linear and accurate resistance-based V-I conversion, it makes use of positive feedback gm-boosting while body effect compensation is realised through diode-connected transistors. Post-layout results from a 3 V-0.5 mum CMOS design show 0.993% V-to-I conversion accuracy, THD below -60 dB at 10 MHz up to 0.7 Vp-p,input and BW above 400 MHz with 2.1 mW power dissipation
Keywords :
CMOS integrated circuits; circuit feedback; convertors; low-power electronics; 0.5 micron; 10 MHz; 2.1 mW; 3 V; CMOS V-I converter; body effect compensation; diode-connected transistors; low-voltage source-degenerated-based V-I converter; positive feedback gm-boosting; source degeneration;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20070820
Filename :
4202055
Link To Document :
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