Title :
High-performance 1.3 /spl mu/m InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
Author :
Jin, C.Y. ; Liu, H.Y. ; Badcock, T.J. ; Groom, K.M. ; Gutiérrez, M. ; Royce, R. ; Hopkinson, M. ; Mowbray, D.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield
fDate :
12/1/2006 12:00:00 AM
Abstract :
A high-growth-temperature GaAs spacer layer (HGTSL) is shown to significantly improve the performance of 1.3 mum multilayer InAs/GaAs quantum-dot (QD) lasers. The HGTSL inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved performance of QD lasers. To further reduce the threshold current density and improve the room-temperature characteristic temperature (T0), the high-reflection (HR) coating and p-type modulation doping have been incorporated with the HGTSL technique. A very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A cm-2 are achieved for a three-layer device with a 1 mm HR/HR cavity, while a very low threshold current density of 48 A cm-2 and a negative T0 are achieved in the p-doped lasers
Keywords :
III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; laser beams; laser cavity resonators; light reflection; optical films; optical modulation; quantum dot lasers; semiconductor doping; thermo-optical effects; 1.3 mum; 1.5 mA; 293 to 298 K; GaAs spacer layer; InAs-GaAs; InAs/GaAs lasers; continuous-wave threshold current; high-growth-temperature spacer; high-reflection cavity; high-reflection coating; low threshold current laser; multilayer quantum dots; negative characteristic temperature laser; p-doped lasers; p-type modulation doping; quantum-dot lasers; room-temperature; threading dislocation formation; three-layer device; threshold current density;
Journal_Title :
Optoelectronics, IEE Proceedings
DOI :
10.1049/ip-opt:2006004
