• DocumentCode
    85571
  • Title

    Tailoring Effect of Enhanced Local Electric Field From Metal Nanoparticles on Electroluminescence of Silicon-Rich Silicon Nitride

  • Author

    Feng Wang ; Dongsheng Li ; Deren Yang ; Duanlin Que

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou, China
  • Volume
    19
  • Issue
    3
  • fYear
    2013
  • fDate
    May-June 2013
  • Firstpage
    4602504
  • Lastpage
    4602504
  • Abstract
    The electroluminescence (EL) wavelength tailoring of silicon-rich silicon nitride (SiNx)-based light-emitting devices (LEDs) is achieved by the modulation of the dimensions of Ag nanoparticles. Two EL peaks are observed in our SiNx-based LEDs, both of which are red shifted with the increasing sizes of Ag nanoparticles. A reasonable explanation on this shift is proposed from the calculation of the local electric field surrounding Ag nanoparticles based on a simple model. This red shift of the two EL peaks as well as the evolution of their relative intensities is mainly originated from its weakening electric field enhancement with the increase of the size of Ag nanoparticles. Our work provides an alternative approach toward the fabrication of SiNx-based LEDs with tunable EL wavelengths.
  • Keywords
    electric fields; electroluminescence; light emitting diodes; nanoparticles; red shift; EL peaks; LED; electroluminescence wavelength tailoring; enhanced local electric field; light-emitting devices; metal nanoparticles; red shift; silicon-rich silicon nitride; tailoring effect; weakening electric field enhancement; Educational institutions; Electric fields; Electroluminescence; Light emitting diodes; Modulation; Nanoparticles; Silicon; Electroluminescence (EL); full-color display; light-emitting devices (LEDs); local electrical field; localized surface plasmons (LSPs); silicon-rich silicon nitride (SiN$_{x}$); wavelength tailoring;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2013.2252001
  • Filename
    6476628