Title :
Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching
Author :
Zhang, Z.Y. ; Luxmoore, I.J. ; Jiang, Q. ; Liu, H.Y. ; Groom, K.M. ; Childs, D.T. ; Hopkinson, M. ; Cullis, A.G. ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield
Abstract :
Broadband quantum dot superluminescent light emitting diodes (LEDs) are realised by focused ion beam etching an angled facet in an edge emitting dot-in-well laser diode structure. The device exhibits a large and flat emission spectral width up to 142 nm at 0.3 mW, maximum CW output power as high as 3 mW, and effective facet reflectivity <1times10-6
Keywords :
III-V semiconductors; focused ion beam technology; gallium arsenide; indium compounds; quantum dot lasers; sputter etching; superluminescent diodes; 0.3 mW; 3 mW; CW output power; InAs-InGaAs; angled facet; broadband quantum dot superluminescent LED; edge emitting dot-in-well laser diode structure; effective facet reflectivity; emission spectral width; focused ion beam etching; light emitting diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070828
