DocumentCode :
855748
Title :
Investigation of non-equilibrium steady-state gain in semiconductor quantum wells
Author :
Bream, P.J. ; Sujecki, S. ; Larkins, E.C.
Author_Institution :
Univ. of Nottingham
Volume :
153
Issue :
6
fYear :
2006
fDate :
12/1/2006 12:00:00 AM
Firstpage :
299
Lastpage :
307
Abstract :
A dynamic quantum well (QW) gain model is presented, which is used to investigate non-equilibrium steady-state gain in a QW, under CW electrical and optical excitations. Intrasubband, intersubband and interband carrier-carrier and carrier-phonon scattering processes are distinguished. Carrier capture/escape is modelled as a carrier-carrier scattering process and includes the solution of Poisson´s equation, such that deviations from QW charge neutrality lead to a modification of the capture rate through band bending. Radiative transitions are modelled using a Fermi´s Golden Rule approach. Carrier-carrier scattering is described using the standard relaxation rate approximation. A different approach is adopted for carrier-phonon interactions to account for the carrier kinetic energy thresholds, which exist for intrasubband and intersubband carrier-phonon scattering by phonon emission and absorption. Results show that significant non-equilibrium conditions exist, even in the absence of stimulated emission, and have implications for the use of thermal equilibrium carrier distributions in full laser diode simulation tools
Keywords :
Poisson equation; carrier relaxation time; phonons; quantum well lasers; radiative lifetimes; semiconductor device models; semiconductor quantum wells; Fermi golden rule; Poisson equation; band bending; carrier capture; carrier escape; carrier kinetic energy; dynamic quantum gain model; interband carrier-carrier scattering; intersubband carrier-carrier scattering; intersubband carrier-phonon scattering; intrasubband carrier-carrier scattering; intrasubband carrier-phonon scattering; nonequilibrium steady-state gain; phonon absorption; phonon emission; radiative transitions; relaxation rate approximation; semiconductor quantum wells;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:20060038
Filename :
4027853
Link To Document :
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