Title :
Modelling of the two-state lasing and the turn-on delay in 1.55 μm InAs/InP (113)B quantum dot lasers
Author :
Veselinov, K. ; Grillot, F. ; Bekiarski, A. ; Loualiche, S.
Author_Institution :
Lab. d´´Etude des Nanostructures a Semiconducteurs, UMR CNRS FOTON, Rennes
fDate :
12/1/2006 12:00:00 AM
Abstract :
Numerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the origin of the two-state lasing in 1.55 mum InAs/InP (113)B (QD) lasers. In order to investigate the QD laser dynamics, numerical results for the turn-on delay of the double laser emission are also presented and discussed
Keywords :
III-V semiconductors; indium compounds; laser theory; laser transitions; quantum dot lasers; 1.55 mum; InAs-InP; InAs-InP quantum dot lasers; carrier dynamics; carrier relaxation; cascade relaxation model; double laser emission; rate equations; turn-on delay; two-state lasing;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20060043
