DocumentCode :
855859
Title :
Switching characteristics of certain sputtered thin films
Author :
Fisher, R.D. ; Khan, Mahbub R.
Author_Institution :
Seagate Magnetics, Fremont, CA, USA
Volume :
26
Issue :
5
fYear :
1990
fDate :
9/1/1990 12:00:00 AM
Firstpage :
1626
Lastpage :
1628
Abstract :
Sputtered thin films with compositions consisting of Co75 NI25, [Co75Ni25]90Mo 10, and [Co75Ni25]90Ta10 atomic percent were evaluated relative to their magnetic properties as a function of thickness. The maximum coercive force at the optimum thickness (<325 Å) was determined to be directly proportional to the saturation magnetization. However, the coercive force was inversely proportional to the saturation magnetization in thicker (>300-Å) films. Magnetization reversal of thick films (1000 Å) was primarily determined by domain wall displacement, which may be followed by coherent rotation. The magnetization reversal in thin films, i.e. at the optimum thickness for maximum coercive force, primarily agrees with a chain-of-spheres model or a fanning mechanism
Keywords :
cobalt alloys; coercive force; magnetic domain walls; magnetic thin films; magnetisation; magnetisation reversal; molybdenum alloys; nickel alloys; sputtered coatings; tantalum alloys; Co75Ni25; [Co75Ni25]90Mo10; [Co75Ni25]90Ta10; chain-of-spheres model; coercive force; coherent rotation; domain wall displacement; fanning mechanism; magnetic properties; magnetization reversal; optimum thickness; saturation magnetization; sputtered thin films; switching characteristics; Coercive force; Magnetic field measurement; Magnetic films; Magnetic hysteresis; Magnetic properties; Magnetization reversal; Saturation magnetization; Sputtering; Substrates; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.104469
Filename :
104469
Link To Document :
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