Title :
GaN Nanowire Field Emitters With the Adsorption of Au Nanoparticles
Author :
Tsai, Tsung-Yen ; Chang, S.-J. ; Weng, Wen-Yin ; Li, Sinan ; Liu, Siyuan ; Hsu, Cheng-Liang ; Hsueh, Han-Ting ; Hsueh, Ting-Jen
Author_Institution :
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan
Abstract :
We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.
Keywords :
Adsorption; Gallium nitride; Gold; Light emitting diodes; Nanoparticles; Nanoscale devices; X-ray scattering; Au nanoparticle; GaN; field emission; nanowires;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2247558
