DocumentCode
856251
Title
The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs
Author
Chiu, Hsien-Chin ; Yang, Shih-Cheng ; Chan, Yi-Jen ; Chen, Shu-Han ; Liu, Wei-Sheng ; Chyi, Jen-Inn
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Volume
51
Issue
1
fYear
2004
Firstpage
156
Lastpage
158
Abstract
The properties of doped-channel field-effect transistors (DCFET) have been thoroughly investigated on AlxGa1-xAs/InGaAs (x= 0.3, 0.5, 0.7, 1) heterostructures with various Al mole fractions. In this study, we observed that by introducing a 200-Å-thick Al0.5Ga0.5As (x=0.5) Schottky layer can enhance the device power performance, as compared with the conventional x=0.3 AlGaAs composition system. However, a degradation of the device power performance was observed for further increasing the Al mole fractions owing to their high sheet resistance and surface states. Therefore, Al0.5Ga0.5As Schottky layer design provides a good opportunity to develop a high power device for power amplifier applications.
Keywords
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium compounds; indium compounds; semiconductor device reliability; semiconductor doping; semiconductor heterojunctions; AlxGa1-xAs-In0.15Ga0.85As; HFETs; Schottky layer; aluminium mole fractions; device power performance; doped-channel field-effect transistors; doping; heterostructures; high power device; microwave power performance; power amplifier applications; sheet resistance; surface states; Breakdown voltage; Degradation; FETs; Fabrication; Gallium arsenide; HEMTs; Linearity; MODFETs; Radio frequency; Surface resistance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.820646
Filename
1258159
Link To Document