Title :
Broadband characterization of high-dielectric constant films for power-ground decoupling
Author :
Obrzut, Jan ; Noda, Natsuko ; Nozaki, Ryusuke
Author_Institution :
Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fDate :
8/1/2002 12:00:00 AM
Abstract :
We evaluated the broadband dielectric permittivity and impedance characteristics of high dielectric constant films for decoupling capacitance applications at frequencies of 100 to 10 GHz. In order to extend the measurements to the microwave range, we developed an appropriate expression for the input admittance of a thin-film capacitance terminating a coaxial line. The theoretical model treats the capacitance as a distributed network and correlates the network scattering parameter with complex permittivity of the specimen. The method eliminates the systematic uncertainties of the lumped element approximations and is suitable for high-frequency characterization of low-impedance substrates.
Keywords :
S-parameters; capacitance; dielectric thin films; distributed parameter networks; electric impedance measurement; microwave reflectometry; millimetre wave measurement; permittivity measurement; time-domain reflectometry; waveguide discontinuities; TDR; broadband characteristics; coaxial discontinuity; complex permittivity; decoupling capacitance; dielectric permittivity characteristics; distributed network; fundamental mode; high dielectric constant films; high-frequency characterization; impedance characteristics; input admittance; low-impedance substrates; microstrip resonator technique; network scattering parameter; power-ground decoupling; propagation model; thin-film capacitance; Admittance measurement; Capacitance measurement; Coaxial components; Dielectric measurements; Dielectric thin films; Frequency; High-K gate dielectrics; Impedance; Microwave measurements; Permittivity measurement;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2002.803393