• DocumentCode
    856418
  • Title

    Hole-well antimonide laser diodes on GaSb operating near 2.93 μm

  • Author

    Cerutti, L. ; Boissier, G. ; Grech, P. ; Perona, A. ; Angellier, J. ; Rouillard, Y. ; Kaspi, R. ; Genty, F.

  • Author_Institution
    Univ. of Montpellier
  • Volume
    42
  • Issue
    24
  • fYear
    2006
  • Firstpage
    1400
  • Lastpage
    1401
  • Abstract
    The operation of electrically-pumped type-II Sb-based laser diodes in which only the holes are quantum confined is reported. These laser structures were fabricated by molecular beam epitaxy on (001) GaSb substrates. In the multi-quantum well region, radiative recombinations originate from InGaSb hole wells embedded in InGaAsSb barriers lattice-matched to GaSb. Laser operation was demonstrated from such structures up to 243 K at 2.93 mum in the pulsed regime (200 ns, 5 kHz). A minimum threshold of about 12.8 kW/cm2 combined with a T0 around 70 K have been measured
  • Keywords
    III-V semiconductors; arsenic compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum wells; substrates; (001) substrate; 2.93 micron; 200 ns; 5 kHz; InGaSb-InGaAsSb; hole-well laser diodes; laser structures; molecular beam epitaxy; multiquantum well region; quantum confinement; radiative recombinations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20062753
  • Filename
    4027915
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=856418