Title :
Monolithically integrated 10 Gbit=s photodiode and transimpedance amplifier in thin-film SOI CMOS technology
Author :
Afzalian, A. ; Flandre, D.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
Abstract :
The first monolithically integrated photodiode and transimpedance amplifier in ultra-thin-film SOI technology for 10 Gbit/s short-distance optical communication is presented. Results indicate performances compatible with the application, at very low power consumption, chip area and cost, using an all-silicon receiver in a 0.13 mum SOI CMOS technology
Keywords :
CMOS integrated circuits; amplifiers; integrated optoelectronics; optical receivers; photodiodes; silicon-on-insulator; 0.13 micron; 10 Gbit/s; SOI CMOS technology; all-silicon receiver; photodiode; short-distance optical communication; transimpedance amplifier; ultra-thin-film SOI technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062563
