• DocumentCode
    856619
  • Title

    RF knee walkout and source access region of unpassivated HFETs

  • Author

    Bilbro, G.L. ; Trew, R.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC
  • Volume
    42
  • Issue
    24
  • fYear
    2006
  • Firstpage
    1425
  • Lastpage
    1426
  • Abstract
    A simple circuit model is used for the source access region of an AlGaN/GaN HFET in a microwave power amplifier to show that the interaction between gate-to-source surface current and 2DEG conductivity by itself can produce RF knee walkout
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave power amplifiers; semiconductor device models; wide band gap semiconductors; 2DEG conductivity; AlGaN-GaN; RF knee walkout; gate-to-source surface current; heterostructure field effect transistor; microwave power amplifier; source access region; unpassivated HFET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20062113
  • Filename
    4027931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=856619