• DocumentCode
    856665
  • Title

    Continuous stimulated emission from GaAs diodes at 77°K

  • Author

    Pilkuhn, M. ; Rupprecht, H. ; Woodall, J.

  • Author_Institution
    IBM Corp., T. J. Watson Research Center, Yorktown Heights, N. Y.
  • Volume
    51
  • Issue
    9
  • fYear
    1963
  • Firstpage
    1243
  • Lastpage
    1243
  • Abstract
    A study was undertaken for preparing low threshold GaAs laser materials. Optimum results were obtained by using boat grown GaAs (Te doped with an electron concentration of 1-2 xlO18cm-3). Extremely planar junctions resulted from diffusing Zn out of ZnAs2 source into the n-type substrates at 85O°C for 24 hours. Large area contacts giving uniform current distribution were found essential for low thresholds.
  • Keywords
    Current density; Diodes; Electrons; Fabry-Perot; Frequency; Gallium arsenide; Optical materials; Stimulated emission; Tellurium; Zinc;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1963.2505
  • Filename
    1444435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=856665