DocumentCode :
856727
Title :
InGaAs/GaAs 0.98- 
Low-Divergence Central-Lobe Semiconductor Lasers With 
Author :
Fekete, Dan ; Shomroni, Itay
Author_Institution :
Dept. of Phys., Technion - Israel Inst. of Technol., Haifa
Volume :
45
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
700
Lastpage :
7010
Abstract :
In this paper, we describe a new structure design for producing low-threshold, high-efficiency, and high-brightness 0.98-mum lasers. In this structure, we incorporated a self-discriminating weak optical confinement asymmetrical waveguide coupled to passive waveguides, and an active region based on three InGaAs quantum wells (QWs) coupled to Te n-type delta-doping. Optimized coupling between the delta-doping and the three QWs, together with waveguide optimization and doping profile optimization, yields Jth = 98 A/cm2 per QW, T0 = 80degC, and a far-field central lobe angle of ~10deg.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; quantum well lasers; resonant tunnelling devices; semiconductor doping; waveguide lasers; InGaAs-GaAs; asymmetrical waveguide coupling; central-lobe semiconductor laser; delta-doped resonant tunneling quantum well; doping profile optimization; far-field central lobe angle; low-divergence semiconductor laser; optical confinement; self-discriminating waveguide; waveguide optimization; wavelength 0.98 mum; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser beams; Laser modes; Laser radar; Optical pumping; Optical waveguides; Semiconductor lasers; Waveguide lasers; High-power semiconductor lasers; indium alloys; n-type $delta$ -doping; quantum-well (QW) lasers; strain;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2009.2013145
Filename :
4914937
Link To Document :
