• DocumentCode
    856883
  • Title

    Novel hemispherical vertical cavity 1.3 mu m surface-emitting laser on semi-insulating substrate

  • Author

    Ho, Jonathan C. ; Yu, Paul K. L. ; Jing, X.L. ; Bradley, E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
  • Volume
    25
  • Issue
    21
  • fYear
    1989
  • Firstpage
    1427
  • Lastpage
    1428
  • Abstract
    A vertical cavity GaInAsP/InP surface-emitting laser at 1.3 mu m wavelength is demonstrated with a hemispherical cavity structure. The laser consists of a circular mesa buried (passivated) in polyimide and is made on a semi-insulating InP substrate. CW operation was obtained at 77 K with a threshold current density of 90 kA/cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor junction lasers; 1.3 micron; 77 K; CW operation; GaInAsP-InP; InP; circular mesa buried; hemispherical vertical cavity; polyimide; semi-insulating substrate; surface-emitting laser; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890952
  • Filename
    46224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=856883