Title :
Novel hemispherical vertical cavity 1.3 mu m surface-emitting laser on semi-insulating substrate
Author :
Ho, Jonathan C. ; Yu, Paul K. L. ; Jing, X.L. ; Bradley, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
A vertical cavity GaInAsP/InP surface-emitting laser at 1.3 mu m wavelength is demonstrated with a hemispherical cavity structure. The laser consists of a circular mesa buried (passivated) in polyimide and is made on a semi-insulating InP substrate. CW operation was obtained at 77 K with a threshold current density of 90 kA/cm2.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor junction lasers; 1.3 micron; 77 K; CW operation; GaInAsP-InP; InP; circular mesa buried; hemispherical vertical cavity; polyimide; semi-insulating substrate; surface-emitting laser; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890952
