A low power and low noise p-HEMT ku band VCO

Author

Manan, Vikas ; Long, Stephen I.

Author_Institution

Univ. of California, Santa Barbara, CA

Volume

16

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

131

Lastpage

133

Abstract

In this letter, we report a differential 12-GHz voltage-controlled oscillator (VCO) implemented using a commercial GaAs pseudomorphic high electron mobility transistor (p-HEMT) process. The VCO can operate with 3mW of dc power. The single-side-band phase noise at 1-MHz offset from the carrier is -116dBc and is achieved with 15mW of dc power consumption. This VCO has a figure of merit of -190.5dBc which is the best that has been reported for a p-HEMT VCO in the authors´ knowledge

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC oscillators; gallium arsenide; integrated circuit noise; low-power electronics; voltage-controlled oscillators; 12 GHz; 15 mW; 3 mW; GaAs; Ku band; VCO; low noise p-HEMT; low power p-HEMT; pseudomorphic high electron mobility transistor process; single-side-band phase noise; voltage-controlled oscillator; Capacitance; Capacitors; Circuit noise; HEMTs; MODFETs; Phase noise; Semiconductor device noise; Threshold voltage; Varactors; Voltage-controlled oscillators; Figure of merit (FOM); high electron mobility transistor (HEMT); phase noise; voltage-controlled oscillator (VCO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.869856

Filename

1603589