• DocumentCode
    856986
  • Title

    Plasma-hydrogenated low-threshold wide-band 1.3 mu m buried ridge structure laser

  • Author

    Kazmierski, C. ; Theys, B. ; Rose, B. ; Mircea, A. ; Jalil, Abdul ; Chevallier, J.

  • Author_Institution
    CNET, Bagneux, France
  • Volume
    25
  • Issue
    21
  • fYear
    1989
  • Firstpage
    1433
  • Lastpage
    1435
  • Abstract
    The plasma hydrogenation of p-type InP has been applied to the fabrication of buried ridge structure (BRS) lasers. The threshold current, output power and modulation bandwidth of the obtained devices compare favourably with those of more conventional ones fabricated by proton implantation on the same wafer.
  • Keywords
    III-V semiconductors; diffusion in solids; hydrogen; indium compounds; semiconductor junction lasers; 1.3 micron; InP; buried ridge structure laser; modulation bandwidth; output power; plasma hydrogenation; proton implantation; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890957
  • Filename
    46228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=856986