• DocumentCode
    85703
  • Title

    A 2.74-pJ/bit, 17.7-Gb/s Iterative Concatenated-BCH Decoder in 65-nm CMOS for NAND Flash Memory

  • Author

    Youngjoo Lee ; Hoyoung Yoo ; Jaehwan Jung ; Jihyuck Jo ; In-Cheol Park

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    48
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    2531
  • Lastpage
    2540
  • Abstract
    To improve the reliability of MLC NAND flash memory, this paper presents an energy-efficient high-throughput architecture for decoding concatenated-BCH (CBCH) codes. As the data read from the flash memory is hard-decided in practical applications, the proposed CBCH decoding method is a promising solution to achieve both high error-correction capability and energy efficiency. In the proposed CBCH decoding, the number of on-chip memory accesses consuming much energy is minimized by computing and updating syndromes two-dimensionally. To achieve an area-efficient hardware realization, row and column decoders are unified into one decoder and some syndromes are computed when they are needed. In addition, the decoding throughput is enhanced remarkably by skipping redundant decoding processes. Based on the proposed CBCH decoding architecture, a prototype chip is implemented in a 65-nm CMOS process to decode the (70528, 65536) CBCH code. The proposed decoder provides a decoding throughput of 17.7 Gb/s and an energy efficiency of 2.74 pJ/bit, being vastly superior to the state-of-the-art architectures.
  • Keywords
    BCH codes; CMOS memory circuits; NAND circuits; concatenated codes; error correction codes; flash memories; integrated circuit reliability; iterative decoding; MLC NAND flash memory; bit rate 17.7 Gbit/s; column decoders; decoding throughput; error-correction capability; on-chip memory; reliability; row decoders; size 65 nm; Buffer storage; Complexity theory; Computer architecture; Decoding; Hardware; Iterative decoding; Polynomials; CBCH; ECC; VLSI; flash memory; low-power architecture;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2013.2275655
  • Filename
    6581919