Carrier Transport in High-Mobility III–V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications

DC and high-frequency device characteristics of In_0.7Ga_0.3As and InSb quantum-well field-effect transistors (QWFETs) are measured and benchmarked against state-of- the-art strained silicon (Si) nMOSFET devices, all measured on the same test bench. Saturation current (I_on) gam of 20% is observed in the In_0.7Ga_0.3As QWFET over the strained Si nMOSFET at (V_g - V_t) = 0.3 V, V_ds = 0.5 V, and matched I_off, despite higher external resistance and large gate-to-channel thickness. To understand the gain in I_on, the effective carrier velocities (v_eff) near the source-end are extracted and it is observed that at constant (V_g - V_t) = 0.3 V and V_ds = 0.5 V, the v_eff of In_0.7Ga_0.3As and InSb QWFETs are 4-5times higher than that of strained silicon (Si) nMOSFETs due to the lower effective carrier mass in the QWFETs. The product of v_eff and charge density (n_s), which is a measure of "intrinsic" device characteristics, for the QWFETs is 50%-70% higher than strained Si at low-voltage operation despite lower ns in QWFETs. Calibrated simulations of In_0.7Ga_0.3As QWFETs with reduced gate-to-channel thickness and external resistance matched to the strained Si nMOSFET suggest that the higher v_eff will result in more than 80% I_on increase over strained Si nMOSFETs at V_ds = 0.5 V, (V_g - V_t) = 0.3 V, and matched I_off, thus showing promise for future high-speed and low-power logic applications.