Modeling of microwave active devices using the FDTD analysis based on the voltage-source approach

Author

Kuo, Chien-Nan ; Wu, Ruey-Beei ; Houshmand, Bijan ; Itoh, Tatsuo

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

6

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

199

Lastpage

201

Abstract

This letter describes a voltage-source-based formulation of the extended finite-difference time-domain algorithm for the purpose of modeling microwave devices. The device-wave interaction is fully characterized by replacing the lumped devices with equivalent voltage sources in the device region, which in turn generate electromagnetic fields according to Faraday´s law. This formulation is applied to the analysis of a typical microwave amplifier, which includes a three-terminal active MESFET device. Simulation results are in good agreement with measured data

Keywords

MESFET circuits; equivalent circuits; finite difference time-domain analysis; lumped parameter networks; microwave amplifiers; FDTD analysis; Faraday law; electromagnetic fields; equivalent voltage sources; finite-difference time-domain algorithm; lumped devices; microwave active devices; microwave amplifier; modeling; simulation; three-terminal MESFET; Circuit simulation; Electromagnetic fields; Equivalent circuits; Finite difference methods; Microstrip; Microwave circuits; Microwave devices; Microwave theory and techniques; Time domain analysis; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.491504

Filename

491504