• DocumentCode
    857411
  • Title

    P-N junctions in lead telluride

  • Author

    Day, H.M. ; Macpherson, A.C.

  • Volume
    51
  • Issue
    10
  • fYear
    1963
  • Firstpage
    1362
  • Lastpage
    1363
  • Keywords
    Alloying; Capacitance-voltage characteristics; Dielectric materials; Electrostatics; Lead compounds; Neodymium; P-n junctions; Semiconductor diodes; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1963.2573
  • Filename
    1444503