• DocumentCode
    857491
  • Title

    Dynamic performance of current-sensing power MOSFETs

  • Author

    Grant, D. ; Pearce, Roger

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bristol Univ.
  • Volume
    24
  • Issue
    18
  • fYear
    1988
  • fDate
    9/1/1988 12:00:00 AM
  • Firstpage
    1129
  • Lastpage
    1131
  • Abstract
    Errors in the output of current-sensing MOSFETs during switching are either perceived, due to measurement difficulties, or real, due to a change in sense ratio, as the device passes from the linear to the fully enhanced region. Transformer action within the device package also produces transients and limits bandwidth
  • Keywords
    electric current measurement; insulated gate field effect transistors; power transistors; switching; transient response; bandwidth limitation; current sense ratio change; current-sensing; device package; drain current; dynamic performance; measurement phenomena; output errors; power MOSFETs; separate source metallisation; switching; transformer effect; transients;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    19586