Title :
Superconducting YBaCuO thin films on silicon with barium silicate buffer layers
Author :
Belousov, I.V. ; Ruban, A.I. ; Il´chenko, V.V. ; Kuznetsov, G.V. ; Strikha, V.I.
Author_Institution :
Inst. of Metal Phys., Acad. of Sci., Kiev, Ukraine
fDate :
6/1/1995 12:00:00 AM
Abstract :
The diffusion barrier capabilities of thin layers of barium silicate, which are determined by the interaction between the YBaCuO compound and Si substrate, have been investigated. Analysis of the films´ elemental depth distributions show that their interaction with the substrates result in the formation of a Ba/sub 2/SiO/sub 4/ layer. The superconducting characteristic of YBaCuO films obtained on barium silicate, in terms of transition width and T/sub c0/, are significantly improved compared to those without buffering.<>
Keywords :
barium compounds; chemical interdiffusion; high-temperature superconductors; sputter deposition; superconducting thin films; superconducting transition temperature; surface diffusion; yttrium compounds; Ba/sub 2/SiO/sub 4/ buffer layer; Si; Si substrate; YBaCuO thin films; YBaCuO-Ba/sub 2/SiO/sub 4/; depth distribution; diffusion barrier capabilities; superconducting critical temperature; transition width; Buffer layers; High temperature superconductors; Semiconductor films; Semiconductor thin films; Silicon; Substrates; Superconducting epitaxial layers; Superconducting films; Superconducting thin films; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
