Title :
Monolithic GaInAs/InP photodetector arrays for high-density wavelength division multiplexing (HDWDM)
Author :
Lee, Woo Seung ; Bland, S.W. ; Robertson, A.J.
Author_Institution :
STC Technol. Ltd., Harlow
fDate :
9/1/1988 12:00:00 AM
Abstract :
Monolithic arrays of interdigitated GaInAs/InP photodetectors have been fabricated for high density wavelength division multiplexing (HDWDM) applications. The detectors typically exhibit a reverse leakage current of 400 nA, capacitance of less than 70 fF and a responsivity of 0.5 A/W at -5 V bias. An optical crosstalk of -33.4 dB has been measured between adjacent detectors in an experimental grating demultiplexer system. Preliminary electrical crosstalk measurements in the frequency range of 1-500 MHz indicate signal isolation of the order of 46 dB
Keywords :
III-V semiconductors; crosstalk; frequency division multiplexing; gallium arsenide; indium compounds; integrated optoelectronics; monolithic integrated circuits; multiplexing equipment; optical communication equipment; photodetectors; 1 to 500 MHz; 400 nA; 70 fF; GaInAs-InP; WDM; electrical crosstalk measurements; grating demultiplexer system; high-density; interdigitated type; monolithic arrays; optical communication equipment; optical crosstalk; photodetector arrays; reverse leakage current; wavelength division multiplexing;
Journal_Title :
Electronics Letters
