Integrated directional couplers with photodetectors by hydride vapour phase epitaxy

Author

Chandrasekhar, S. ; Campbell, Joe C. ; Dentai, A.G. ; Joyner, Charles H. ; Qua, G.J. ; Bridges, T.J.

Author_Institution

AT&T Bell Labs., Holmdel, NJ

Volume

24

Issue

18

fYear

1988

fDate

9/1/1988 12:00:00 AM

Firstpage

1145

Lastpage

1146

Abstract

The hydride vapour-phase-epitaxial crystal growth technique has been used to realise integrated waveguide-photodetectors and, for the first time, integrated directional coupler-photodetectors for detection in the 1.3 μm to 1.55 μm wavelength range. The GaInAsP waveguides which formed the directional couplers had propagation losses of 2±0.5 dB/cm and more than 90% of the guided light was coupled into the photodetectors. The directional couplers were symmetric with respect to the launch port and had 3 dB coupling lengths of about 1.45 mm

Keywords

III-V semiconductors; directional couplers; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical couplers; photodetectors; semiconductor growth; vapour phase epitaxial growth; 1.3 micron; 1.45 mm; 1.55 micron; 3 dB coupling lengths; GaInAsP waveguides; III-V semiconductors; VPE; crystal growth technique; hydride vapour phase epitaxy; integrated directional coupler-photodetectors; integrated optics; integrated optoelectronics; propagation losses;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

19596