• DocumentCode
    858053
  • Title

    Growth and Transport Studies in M/I/p-SC Magnetic Tunnel Diodes Containing Different Tunnel Barrier Materials

  • Author

    Agarwal, K.C. ; Saito, H. ; Yuasa, S. ; Ando, K.

  • Author_Institution
    Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
  • Volume
    43
  • Issue
    6
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    2809
  • Lastpage
    2811
  • Abstract
    Metal-insulator-semiconductor (MIS) magnetic tunnel diodes consisting of ferromagnetic metal (Fe) and semiconductor (Ga1-xMnxAs) electrodes with various tunnel barrier materials (AlAs, GaAs, ZnTe, and MgO) were fabricated. A clear tunneling magnetoresistance (TMR) effect was observed in all the samples. Magnetoresistance ratios at 2 K were observed to be 38% for AlAs, 11% for GaAs, 8% for ZnTe, and ~1% for MgO. Growth and transport studies strongly suggested that the small lattice mismatch between the barrier and the electrode materials and Mn-free interfaces are important for have significant influence on developing high-quality MIS magnetic tunnel diodes.
  • Keywords
    III-V semiconductors; MIS devices; aluminium compounds; ferromagnetic materials; gallium arsenide; iron; magnesium compounds; magnetoelectronics; manganese compounds; semimagnetic semiconductors; tunnel diodes; tunnelling magnetoresistance; zinc compounds; 2 K; Fe-Ga1-xMnxAs-AlAs; Fe-Ga1-xMnxAs-GaAs; Fe-Ga1-xMnxAs-MgO; Fe-Ga1-xMnxAs-ZnTe; MIS diodes; ferromagnetic materials; lattice mismatch; metal-insulator-semiconductor magnetic tunnel diodes; semiconductor electrodes; tunnel barrier materials; tunneling magnetoresistance; Electrodes; Gallium arsenide; Iron; Magnetic materials; Magnetic semiconductors; Metal-insulator structures; Semiconductor diodes; Semiconductor materials; Tunneling magnetoresistance; Zinc compounds; Ferromagnetic semiconductor; metal–semiconductor hybrid structures; spin-dependent transport;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2007.894015
  • Filename
    4202645