Title :
A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene
Author :
Théolier, L. ; Mahfoz-Kotb, H. ; Isoird, K. ; Morancho, F. ; Assié-Souleille, S. ; Mauran, N.
Author_Institution :
CNRS, Univ. de Toulouse, Toulouse, France
fDate :
6/1/2009 12:00:00 AM
Abstract :
A new junction termination for high-voltage devices using a deep trench filled with dielectric, which dramatically decreases the junction-termination area, is proposed and fabricated. The termination breakdown voltage dependence on the dielectric critical electric field (E Cd) and its permittivity (??rd) is theoretically studied. Finally, the proposed junction termination is experimentally validated using BenzoCycloButene (BCB) as dielectric material. Experimental results show that the proposed termination sustains more than 1200 V with a 70-??m-width and 100- ??m-depth trench filled by BCB.
Keywords :
dielectric materials; organic compounds; permittivity; power semiconductor devices; semiconductor device breakdown; BCB; benzocyclobutene; deep trench filling; depth 100 mum; dielectric critical electric field; dielectric material; high-voltage power semiconductor device; junction termination breakdown voltage; permittivity; size 70 mum; voltage 1200 V; Breakdown voltage; deep trench; junction termination;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2020348
