A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene

Author

Théolier, L. ; Mahfoz-Kotb, H. ; Isoird, K. ; Morancho, F. ; Assié-Souleille, S. ; Mauran, N.

Author_Institution

CNRS, Univ. de Toulouse, Toulouse, France

Volume

30

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

687

Lastpage

689

Abstract

A new junction termination for high-voltage devices using a deep trench filled with dielectric, which dramatically decreases the junction-termination area, is proposed and fabricated. The termination breakdown voltage dependence on the dielectric critical electric field (E _Cd) and its permittivity (??_rd) is theoretically studied. Finally, the proposed junction termination is experimentally validated using BenzoCycloButene (BCB) as dielectric material. Experimental results show that the proposed termination sustains more than 1200 V with a 70-??m-width and 100- ??m-depth trench filled by BCB.

Keywords

dielectric materials; organic compounds; permittivity; power semiconductor devices; semiconductor device breakdown; BCB; benzocyclobutene; deep trench filling; depth 100 mum; dielectric critical electric field; dielectric material; high-voltage power semiconductor device; junction termination breakdown voltage; permittivity; size 70 mum; voltage 1200 V; Breakdown voltage; deep trench; junction termination;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2020348

Filename

4915753