Title :
Small turn-on delay time in 1.3 mu m InAsP/InP strained double quantum-well lasers with very-low threshold current
Author :
Fukushima, T. ; Kasukawa, A. ; Iwase, M. ; Namegaya, T. ; Shibata, M.
Author_Institution :
Furukawa Electric Co. Ltd., Yokohama, Japan
Abstract :
It is demonstrated for the first time that compressively strained InAsP/InP double quantum-well (DQW) lasers emitting at 1.3 mu m performed a very small turn-on delay time by a significant reduction in threshold current. Lasers with 200 mu m cavity length and high reflection coating achieved both very low threshold current of 1.8 mA and a small turn-on delay time (200 ps) even under a bias-less 30 mA pulse current. An additional power penalty was simulated, and it was shown that these small-delay and low-threshold performances are suitable for high-speed optical parallel data transmitters in computer networks.<>
Keywords :
III-V semiconductors; indium compounds; laser transitions; semiconductor lasers; 1.3 micron; 1.8 mA; 200 micron; 200 ps; 30 mA; III-V semiconductor; InAsP-InP; InAsP/InP strained double quantum-well lasers; cavity length; computer networks; high reflection coating; high-speed optical parallel data transmitters; power penalty; small turn-on delay time; very-low threshold current; Coatings; Computational modeling; Computer simulation; Delay effects; Indium phosphide; Optical pulses; Optical reflection; Optical transmitters; Quantum well lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
