Small turn-on delay time in 1.3 mu m InAsP/InP strained double quantum-well lasers with very-low threshold current

Author

Fukushima, T. ; Kasukawa, A. ; Iwase, M. ; Namegaya, T. ; Shibata, M.

Author_Institution

Furukawa Electric Co. Ltd., Yokohama, Japan

Volume

5

Issue

2

fYear

1993

Firstpage

117

Lastpage

119

Abstract

It is demonstrated for the first time that compressively strained InAsP/InP double quantum-well (DQW) lasers emitting at 1.3 mu m performed a very small turn-on delay time by a significant reduction in threshold current. Lasers with 200 mu m cavity length and high reflection coating achieved both very low threshold current of 1.8 mA and a small turn-on delay time (200 ps) even under a bias-less 30 mA pulse current. An additional power penalty was simulated, and it was shown that these small-delay and low-threshold performances are suitable for high-speed optical parallel data transmitters in computer networks.<>

Keywords

III-V semiconductors; indium compounds; laser transitions; semiconductor lasers; 1.3 micron; 1.8 mA; 200 micron; 200 ps; 30 mA; III-V semiconductor; InAsP-InP; InAsP/InP strained double quantum-well lasers; cavity length; computer networks; high reflection coating; high-speed optical parallel data transmitters; power penalty; small turn-on delay time; very-low threshold current; Coatings; Computational modeling; Computer simulation; Delay effects; Indium phosphide; Optical pulses; Optical reflection; Optical transmitters; Quantum well lasers; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.195976

Filename

195976