Auger recombination rates in compressively strained In/sub x/Ga/sub 1-x/As/InGaAsP/InP (0.53

Author

Davis, L. ; Lam, Y. ; Nichols, D. ; Singh, J. ; Bhattacharya, P.K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

5

Issue

2

fYear

1993

Firstpage

120

Lastpage

122

Abstract

The authors have experimentally determined Auger recombination rates in compressively strained In/sub x/Ga/sub 1-x/As/InGaAsP/InP MQW lasers for the first time. The Auger recombination rates were derived from the measured turn-on delay times during large-signal modulation of single-mode lasers. The Auger coefficient increases from 5+or-1*10/sup -30/ to 13+or-1*10/sup -30/ cm/sup 6/ s/sup -1/ as the indium composition in the quantum well active region, x, increases from 0.53 to 0.73.<>

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor lasers; Auger recombination rates; III-V semiconductor; InGaAs-InGaAsP-InP; compressively strained In/sub x/Ga/sub 1-x/As/InGaAsP/InP MQW lasers; large-signal modulation; quantum well active region; single-mode lasers; turn-on delay times; Bandwidth; Fiber lasers; Indium gallium arsenide; Indium phosphide; Laser theory; Optical pulses; Pulse measurements; Quantum well lasers; Radiative recombination; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.195977

Filename

195977