Title :
A 20 GHz bandwidth InGaAsP/InP MTBH laser module
Author :
Atlas, D.A. ; Rosiewicz, A.
Author_Institution :
Laserton Inc., Burlington, MA, USA
Abstract :
A 1.3- mu m InGaAsP/InP straight-wall mass-transport buried heterostructure (MTBH) laser diode was designed and fabricated to operate over a bandwidth of 20 GHz. The laser when used in a microwave link has an RF insertion loss of 37 dB, an equivalent input noise density of less than -115 dBm/Hz, input power at 1 dB compression greater than 23 dBm and a spurious signal free dynamic range of 97 dB-Hz/sup 2/3/. The wide bandwidth, high dynamic range, and low noise of the laser module were obtained through the design of the package, the subcarrier, and the laser chip.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; modules; semiconductor lasers; 1.3 micron; 20 GHz; 37 dB; III-V semiconductor; InGaAsP-InP; InGaAsP/InP MTBH laser module; RF insertion loss; design; equivalent input noise density; input power; laser chip; low noise; microwave link; package; signal free dynamic range; straight wall mass transport buried heterostructure LD; subcarrier; Bandwidth; Diode lasers; Dynamic range; Indium phosphide; Insertion loss; Laser noise; Masers; Optical design; Power lasers; Radio frequency;
Journal_Title :
Photonics Technology Letters, IEEE
