High-power temperature-insensitive gain-offset InGaAs/GaAs vertical-cavity surface-emitting lasers

Author

Young, D.B. ; Scott, J.W. ; Peters, F.H. ; Thibeault, B.J. ; Corzine, S.W. ; Peters, M.G. ; Lee, S.-L. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Santa Barbara, CA, USA

Volume

5

Issue

2

fYear

1993

Firstpage

129

Lastpage

132

Abstract

The authors have grown 997 nm vertical-cavity surface-emitting lasers with an offset between the wavelength of the cavity mode and the quantum well gain peak to improve high temperature operation, and with higher aluminum-content barriers around the active region to improve the carrier confinement. They fabricated lasers of 8-15 and 20- mu m diameters. The 8- mu m-diameter devices exhibited CW operation up to 140 degrees C with little change in threshold current from 15 degrees C to 100 degrees C, and the 20- mu m-diameter devices showed CW output power of 11 mW at 25 degrees C without significant heat sinking.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 11 mW; 15 to 140 degC; 20 micron; 8 to 15 micron; 997 nm; CW operation; CW output power; III-V semiconductor; InGaAs-GaAs; InGaAs/GaAs vertical-cavity surface-emitting lasers; VCSEL; active region; carrier confinement; cavity mode wavelength; high temperature operation; quantum well gain peak; temperature insensitive gain offset lasers; threshold current; Carrier confinement; Gallium arsenide; Indium gallium arsenide; Laser modes; Quantum well lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.195980

Filename

195980