High electronic-optical conversion efficiency in a vertical-to-surface transmission electro-photonic device with a vertical cavity

Author

Numai, Takahiro ; Kurihara, Kaori ; Ogura, Ichiro ; Kosaka, Hideo ; Sugimoto, Mitsunori ; Kasahara, Kenichi

Author_Institution

NEC Corp., Ibaraki, Japan

Volume

5

Issue

2

fYear

1993

Firstpage

136

Lastpage

139

Abstract

Electronic-optical conversion efficiency of 11.4% in a vertical-to-surface-transmission electrophotonic device with a vertical cavity is reported. Reduction of the electrical resistance by the double mesa structure, efficient confinement of carriers in the active region by the proton implanted structure, and photon recycling by sidewall reflectors lead to this high conversion efficiency. Efficiency over 10% is achieved for the first time in surface-emitting devices.<>

Keywords

distributed Bragg reflector lasers; laser cavity resonators; semiconductor lasers; 10 to 11.4 percent; DBR mirrors; GaAs-AlAs; In/sub 0.2/Ga/sub 0.8/As; VC-VSTEP; active region; double mesa structure; efficient carrier confinement; electrical resistance; high electronic optical conversion efficiency; photon recycling; proton implanted structure; sidewall reflectors; surface-emitting devices; vertical cavity; vertical-to-surface transmission electro-photonic device; Anodes; Distributed Bragg reflectors; Electric resistance; Optical reflection; Particle beam optics; Protons; Recycling; Reflectivity; Stimulated emission; Surface resistance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.195982

Filename

195982