• DocumentCode
    858291
  • Title

    Determination of Mn Acceptor Compensation in MBE-Grown GaMnAs via Magnetic Circular Dichroism (MCD)

  • Author

    Chakarvorty, Raja ; Zhou, Ying-Yuan ; Cho, Yong-Jin ; Liu, Xinyu ; Jakiela, Rafal ; Barcz, Adam ; Furdyna, Jacek K. ; Dobrowolska, Malgorzata

  • Author_Institution
    Dept. of Phys., Notre Dame Univ., IN
  • Volume
    43
  • Issue
    6
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    3031
  • Lastpage
    3033
  • Abstract
    In order to investigate the origin of the magnetic circular dichroism (MCD) in Ga1-xMnx As, we prepared a series of paramagnetic samples with a very low Mn content (x~0.0005 and 0.0003), grown at different substrate temperatures. The samples grown at low temperatures (< 300 degC) show a sign change in the MCD, while those grown at higher temperatures (>300degC) reveal broad positive MCD spectra similar to those observed in ferromagnetic Ga1-xMnxAs. In addition, samples grown at high temperature ( ~600 degC) but with Si co-doping show a behavior typical to samples grown at low substrate temperatures, namely sign changing MCD spectra. Our results indicate that the negative component of the MCD does not originate from the interband transitions but from transitions involving ionized Mn acceptors
  • Keywords
    III-V semiconductors; Zeeman effect; antisite defects; doping profiles; ferromagnetic materials; gallium arsenide; magnetic circular dichroism; manganese compounds; molecular beam epitaxial growth; semiconductor doping; semimagnetic semiconductors; GaMnAs:Si; MBE; MCD spectra; Zeeman splitting; antisite; doping; ferromagnetic materials; magnetic circular dichroism; magnetic semiconductor; paramagnetic samples; Absorption; Antiferromagnetic materials; Gallium arsenide; Magnetic properties; Magnetic semiconductors; Molecular beam epitaxial growth; Paramagnetic materials; Physics; Substrates; Temperature distribution; Arsenic antisite; GaMnAs, magnetic circular dichroism; Zeeman splitting; ferromagnetism; magnetic semiconductor;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2007.894343
  • Filename
    4202668