DocumentCode :
858303
Title :
Excess noise in field-effect transistors
Author :
Halladay, H.E. ; Bruncke, W.C.
Volume :
51
Issue :
11
fYear :
1963
Firstpage :
1671
Lastpage :
1671
Keywords :
Diodes; FETs; Frequency; Germanium; Low-frequency noise; Noise level; Noise measurement; Silicon; Transconductance; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2660
Filename :
1444590
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=858303
