DocumentCode :
858308
Title :
Design of low-voltage MOSFET-only ΣΔ modulators in standard digital CMOS technology
Author :
Tille, Thomas ; Sauerbrey, Jens ; Mauthe, Manfred ; Schmitt-Landsiedel, Doris
Author_Institution :
Inst. of Tech. Electron., Tech. Univ. of Munich, Germany
Volume :
51
Issue :
1
fYear :
2004
Firstpage :
96
Lastpage :
109
Abstract :
A design strategy of low-voltage high-linearity MOSFET-only ΣΔ modulators in standard digital CMOS technology is presented. The modulators use substrate-biased MOSFETs in the depletion region as capacitors, linearized by different compensation techniques. This work shows the design, simulation and measured results of a number of MOSFET-only ΣΔ modulators using different implementations of so called compensated depletion-mode MOS capacitors. The modulators are designed for the demands of speech band applications. The performance of the modulators proves the capability of compensated depletion-mode MOS capacitors to fulfill analog circuit requirements at low supply voltages with reduced processing efforts.
Keywords :
CMOS integrated circuits; MOS capacitors; MOSFET; compensation; integrated circuit design; sigma-delta modulation; speech processing; MOSCAP; analog circuit requirements; compensated depletion-mode MOS capacitors; compensation technique linearization; depletion region substrate-biased MOSFET capacitors; design strategy; low-voltage MOSFET-only ΣΔ modulator design; processing efforts; simulation; speech band applications; standard digital CMOS technology; supply voltages; switched-capacitor circuits; CMOS process; CMOS technology; Capacitance; Circuit simulation; Digital modulation; Low voltage; MOS capacitors; MOSFET circuits; Measurement standards; Switching circuits;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2003.821296
Filename :
1259491
Link To Document :
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