Title :
A 10 Gb/s high sensitivity, monolithically integrated p-i-n-HEMT optical receiver
Author :
Akatsu, Y. ; Miyagawa, Y. ; Miyamoto, Y. ; Kobayashi, Y. ; Akahori, Y.
Author_Institution :
NTT Transmission Syst. Lab., Kanagawa, Japan
Abstract :
A high-sensitivity, monolithically integrated optical receiver, composed of a p-i-n-PD and high electron mobility transistors (p-i-n-HEMTs) is described. The receiver sensitivity is -17.3 dBm at a bit error rate of 1*10/sup -9/ for a 10-Gb/s non-return-to-zero (NRZ) lightwave signal. This value is the best result yet reported for 10-Gb/s monolithically integrated receivers. The sensitivity is -30.6 dBm if an erbium-doped fiber amplifier (EDFA) is placed ahead of the p-i-n-NEMT receiver. A transmission experiment using a 150-km dispersion-shifted fiber (DSF) indicates no degradation in the bit error rate characteristics or the eye pattern. This verifies the practicality of the p-i-n-HEMT optical receiver for high-speed transmission systems.<>
Keywords :
field effect integrated circuits; integrated optoelectronics; optical receivers; p-i-n photodiodes; 10 Gbit/s; 150 km; EDFA; Er doped fibre amplifier; NRZ lightwave signal; bit error rate; bit error rate characteristics; dispersion-shifted fiber; eye pattern; high electron mobility transistors; high sensitivity; high-speed transmission systems; monolithically integrated p-i-n-HEMT optical receiver; non-return-to-zero; photodiode; sensitivity; Bit error rate; Erbium-doped fiber amplifier; HEMTs; MODFETs; Optical feedback; Optical noise; Optical receivers; Optical sensors; Optical signal processing; Power generation;
Journal_Title :
Photonics Technology Letters, IEEE
