Title :
Regrowth-free waveguide-integrated photodetector with efficient total-internal-reflection coupling
Author :
Bossi, D.E. ; Ade, R.W. ; Basilica, R.P. ; Berak, J.M.
Author_Institution :
United Technologies Res. Center, East Hartford, CT, USA
Abstract :
A novel technique utilizing an etched total-internal-reflection mirror for vertical waveguide-to-photodetector coupling is described. An 83% quantum efficiency and 5-GHz bandwidth are achieved at lambda =0.84 mu in a GaAs MSM photodetector illuminated by a low-loss (0.5 dB/cm) AlGaAs double-heterostructure (DH) waveguide. A significant advantage of total-internal-reflection coupling is its compatibility with the integration of low-loss active DH waveguide components without requiring epitaxial regrowth. This coupling technique is independent of both optical wavelength and polarization, and permits efficient waveguide coupling to extremely small-area photodetectors.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical waveguides; photodetectors; 0.5 dB; 0.84 micron; 5 GHz; 83 percent; AlGaAs; GaAs; GaAs MSM photodetector; III-V semiconductor; bandwidth; efficient total-internal-reflection coupling; etched total-internal-reflection mirror; extremely small-area photodetectors; low loss AlGaAs DH waveguide; polarization; quantum efficiency; regrowth free waveguide integrated photodetector; vertical waveguide-to-photodetector coupling; Bandwidth; DH-HEMTs; Etching; Gallium arsenide; Mirrors; Optical coupling; Optical polarization; Optical waveguide components; Optical waveguides; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
