DocumentCode :
858395
Title :
Tunnel diode junction capacitance in the vicinity of built-in voltage
Author :
Nanavati, R.P.
Volume :
51
Issue :
11
fYear :
1963
Firstpage :
1679
Lastpage :
1679
Keywords :
Capacitance; Diodes; Electrons; Equations; Gallium arsenide; Linear antenna arrays; P-n junctions; Signal synthesis; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2669
Filename :
1444599
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=858395
