Performance of InGaAs metal-semiconductor-metal photodetectors on Si

Author

Bartels, A. ; Peiner, E. ; Tang, G.-P. ; Klockenbrink, R. ; Wehmann, H.-H. ; Schlachetzki, A.

Author_Institution

Inst. fur Halbleitertech., Tech. Univ. Braunschweig, Germany

Volume

8

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

670

Lastpage

672

Abstract

The performance of In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors on Si substrates was investigated. The devices were fabricated by standard technology employing metalorganic vapor-phase epitaxy growth on unpatterned exactly [001]-oriented Si substrates and conventional photolithography. At a bias voltage of 5 V the devices exhibit low dark currents of 10/sup -6/-10/sup -7/ A, a high responsivity of 0.26 A/W at 1.3 μm, and a cutoff frequency of 1.5 GHz. A further improvement could be achieved by increasing the bias voltage.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; vapour phase epitaxial growth; 1.3 micron; 1.5 GHz; 5 V; In/sub 0.53/Ga/sub 0.47/As; InGaAs metal-semiconductor-metal photodetectors; Si; Si substrates; cutoff frequency; dark currents; metalorganic vapor-phase epitaxy growth; photolithography; responsivity; Dark current; Epitaxial growth; Epitaxial layers; Fingers; Indium gallium arsenide; Indium phosphide; Photodetectors; Substrates; Superlattices; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.491590

Filename

491590