• DocumentCode
    858666
  • Title

    Spectral linewidth of AlGaAs/GaAs surface-emitting laser

  • Author

    Tanobe, Hiromasa ; Koyama, Fumio ; Iga, Kenichi

  • Author_Institution
    Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    25
  • Issue
    21
  • fYear
    1989
  • Firstpage
    1444
  • Lastpage
    1446
  • Abstract
    The spectral linewidth Delta nu of a vertical cavity surface-emitting (SE) laser was measured for the first time. The linewidth measured by a delayed self-homodyne method was 50 MHz at an output power of 1.4 mW under room-temperature CW operation. The linewidth obtained was guite narrow in spite of the short cavity configuration of the SE laser. This narrow linewidth is attributed to the high-reflectivity mirrors. The measured linewidth is in good agreement with theoretical values.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; spectral line breadth; 1.4 mW; AlGaAs-GaAs; delayed self-homodyne method; high-reflectivity mirrors; room-temperature CW operation; semiconductor lasers; short cavity configuration; spectral linewidth; surface-emitting laser; vertical cavity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890965
  • Filename
    46234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=858666