DocumentCode :
85867
Title :
3.3–3.4- 
Diode Lasers Based on Triple-Layer GaInAsSb Quantum Wells
Author :
Rui Liang ; Kipshidze, G. ; Hosoda, T. ; Shterengas, L. ; Belenky, G.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Volume :
26
Issue :
7
fYear :
2014
fDate :
1-Apr-14
Firstpage :
664
Lastpage :
666
Abstract :
Diode lasers based on triple-layer GaInAsSb quantum wells (QWs) operating in continuous wave regime at room temperature were designed and fabricated. The fine adjustment of the device operating wavelength was achieved by independent control of the effective electron and hole QW widths. The modified W-QW design approach allowed using 50% In composition in 10-12-nm-wide QW to achieve laser operation above 3.2 μm. The diode lasers emitting at 3.3 and 3.4 μm demonstrated 50 mW per 50- μm-wide stripe and 30 mW per 100- μm-wide stripe at 17 °C, respectively.
Keywords :
III-V semiconductors; arsenic compounds; gallium compounds; indium compounds; nanophotonics; optical design techniques; optical fabrication; quantum well lasers; GaInAsSb; continuous wave regime; diode lasers; effective electron; laser operation; modified W-QW design approach; optical fabrication; power 50 mW; room temperature; size 10 nm to 12 nm; size 100 mum; temperature 17 degC; temperature 293 K to 298 K; triple-layer GaInAsSb quantum wells; wavelength 3.3 mum to 3.4 mum; Diode lasers; Optical device fabrication; Optical pumping; Quantum cascade lasers; Standards; Waveguide lasers; GaSb-based; Mid-infrared; W-quantum well; diode lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2014.2302835
Filename :
6730647
Link To Document :
