Title :
Expansion and Collapse of Domains With Reverse Magnetization in (Ga,Mn)As Epilayers With Perpendicular Magnetic Easy Axis
Author :
Dourlat, A. ; Gourdon, C. ; Jeudy, V. ; Testelin, C. ; Khazen, K. ; Cantin, J.L. ; von Bardeleben, H.J. ; Thevenard, L. ; Lemaî, A.
Author_Institution :
Inst. des Nanosci. de Paris, Univ. Paris Denis Diderot
fDate :
6/1/2007 12:00:00 AM
Abstract :
The magnetic domain structure in a ferromagnetic (Ga,Mn)As epilayer with perpendicular magnetic easy-axis is investigated using high-resolution Kerr microscopy (KM). We show that, despite strong hysteresis, domain theory for thermodynamical equilibrium can be used to determine the ratio of the domain wall energy and the magnetic energy. Complementary magnetometry and ferromagnetic resonance (FMR) measurements are used to determine the domain wall energy and thickness and the exchange stiffness constant
Keywords :
III-V semiconductors; Kerr magneto-optical effect; elastic constants; ferromagnetic materials; ferromagnetic resonance; gallium arsenide; magnetic domain walls; magnetic epitaxial layers; magnetic hysteresis; magnetisation reversal; manganese compounds; semiconductor epitaxial layers; semimagnetic semiconductors; (GaMn)As; domain wall energy; exchange stiffness constant; ferromagnetic epilayer; ferromagnetic resonance; high-resolution Kerr microscopy; magnetic domain structure; magnetic epilayers; magnetic hysteresis; magnetic semiconductors; magnetization reversal; magneto-optic Kerr effect; magnetometry; perpendicular magnetic easy axis; reverse magnetization; thermodynamical equilibrium; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic force microscopy; Magnetic hysteresis; Magnetic resonance; Magnetic semiconductors; Magnetization; Perpendicular magnetic anisotropy; Superconducting magnets; Magnetic domains; magnetic semiconductors; magnetization reversal; magneto-optic Kerr effect;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2007.893322
