Title :
18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-μm wavelength communication systems
Author :
Fay, P. ; Wohlmuth, W. ; Caneau, C. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
A very high-speed, long-wavelength, monolithically integrated photoreceiver front end for optical communication systems is described. The tunable photoreceiver, implemented using a metal-semiconductor-metal (MSM) photodetector and InAlAs-InGaAs-InP modulation-doped field-effect transistor (MODFET)-based transimpedance amplifier, exhibits -3 dB bandwidths of up to 18.5 GHz. The receiver demonstrates a midband responsivity of 178 V/W when tuned for 10 Gb/s operation. Noise measurements revealed an input-referred noise current spectral density of 8 pA/Hz/sup 1/2/ when tuned for 10 Gb/s operation, and 12 pA/Hz/sup 1/2/ when tuned for 20 Gb/s operation. From these noise measurements, sensitivities were calculated to be -16.5 dBm and -12.3 dBm at 10 and 20 Gb/s, respectively, for a bit-error rate of 1/spl times/10/sup -9/. To our knowledge, this is the fastest MSM-based receiver reported to date.
Keywords :
HEMT integrated circuits; high-speed optical techniques; integrated circuit noise; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; 1.55 micron; 10 Gbit/s; 18.5 GHz; 20 Gbit/s; InAlAs-InGaAs-InP; bit-error rate; high-speed long-wavelength photoreceiver; metal-semiconductor-metal photodetector; modulation-doped field-effect transistor; monolithic MSM/MODFET photoreceiver; noise current spectral density; optical communication system; responsivity; transimpedance amplifier; tuning; Bandwidth; Epitaxial layers; FETs; HEMTs; MODFETs; Noise measurement; Optical amplifiers; Optical fiber communication; Optical receivers; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
