DocumentCode :
858719
Title :
Formed-point-contact varactor diodes utilizing a thin epitaxial gallium arsenide layer
Author :
Burrus, C.A.
Volume :
51
Issue :
12
fYear :
1963
Firstpage :
1777
Lastpage :
1778
Keywords :
Absorption; Crystalline materials; Diodes; Electric fields; Electrooptic modulators; Frequency; Gallium arsenide; Intensity modulation; Optical modulation; Varactors;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2701
Filename :
1444631
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=858719
