• DocumentCode
    858719
  • Title

    Formed-point-contact varactor diodes utilizing a thin epitaxial gallium arsenide layer

  • Author

    Burrus, C.A.

  • Volume
    51
  • Issue
    12
  • fYear
    1963
  • Firstpage
    1777
  • Lastpage
    1778
  • Keywords
    Absorption; Crystalline materials; Diodes; Electric fields; Electrooptic modulators; Frequency; Gallium arsenide; Intensity modulation; Optical modulation; Varactors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1963.2701
  • Filename
    1444631